Properties of EUVL masks as a function of capping layer and absorber stack structures

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 6517, Issue PART 1, 2007, Pages

  Seo, Hwan K ^a   Park, Jinhong ^a   Lee, Seung Yoon ^a   Park, Joo On ^a   Kim, Hun ^a   Kim, Seong Sue ^a   Cho, Han Ku ^a  

^a SAMSUNG Electronics   (South Korea)

Author keywords

Absorber; Capping layer; EM suite; EUVL; Mask; Multilayer; Reflectivity

Indexed keywords

EXTREME ULTRAVIOLET LITHOGRAPHY; ION BEAM ASSISTED DEPOSITION; MULTILAYERS; RUTHENIUM; SPUTTER DEPOSITION; TANTALUM COMPOUNDS;

ABSORBERS; CAPPING LAYERS; REFLECTIVITY REQUIREMENTS; STACK STRUCTURES;

MASKS;

EID: 35148894055     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.713301     Document Type: Conference Paper

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