Infrared p-n-junction diodes in epitaxial narrow gap PbTe layers on Si substrates

Journal of Applied Physics

Volumn 85, Issue 6, 1999, Pages 3364-3367

  John, J ^a   Zogg, H ^a  

^a ETH ZURICH   (Switzerland)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0001171311     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.369685     Document Type: Article

References (21)

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14. At much lower temperatures, the theoretical band-band recombination cannot be attained by any sensor, the transition temperature to defect limited behavior depends on the band gap and the fabrication technique.
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