Electroluminescence from silicon nanowires

Nanotechnology

Volumn 15, Issue 12, 2004, Pages 1848-1850

  Huo, J ^a   Solanki, R ^a   Freeouf, J L ^a   Carruthers, J R ^a  

^a OREGON HEALTH AND SCIENCE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DEFECTS; DOPING (ADDITIVES); ELECTRIC FIELD EFFECTS; NANOSTRUCTURED MATERIALS; SILICON; WIRE;

DISILANE; ELECTRON-HOLE RECOMBINATION; EMISSION PEAKS; SILICON NANOWIRES;

ELECTROLUMINESCENCE;

EID: 11144275829     PISSN: 09574484     EISSN: None     Source Type: Journal    
DOI: 10.1088/0957-4484/15/12/027     Document Type: Article

References (17)

1. Duan X, Huang Y, Agarwal R and Lieber C M 2003 Nature 421 241
2. Misewich J A, Martel R, Avouris Ph, Tsang J C, Heinze S and Tersoff J 2003 Science 300 783
3. Pankov J I and Carlson D E 1976 Appl. Phys. Lett. 29 620
4. Canham L (ed) 1977 Properties of Porous Silicon (London: INSPEC) pp 290-315
5. Bsiesy A and Vial J C 1996 J. Lumin. 70 310
6. Berhaue S, Kanzlarich S M, Nishimura K, Smith R R, Davis I E, Lee H W, Olse M C and Chase L L 1993 Mater. Res. Soc. Symp. Proc. 298 99
7. Lin J, Zhang L Z, Huang Y M, Zhang B R and Qin G G 1994 Appl. Phys. Lett. 64 3282
8. Steiner P, Kozlowski F and Lang W 1993 IEEE Electron Devices Lett. 14 317
9. Kozlowski F, Santer M, Steiner P, Richter A, Sandmaier H and Lang W 1992 Thin Solid Films 222 196
10. Decker C A, Solanki R, Freeouf J, Carruthers J R and Evans D R 2004 Appl. Phys. Lett. 84 1389
11. Wagner R S and Ellis W C 1964 Appl. Phys. Lett. 4 89
12. Conley J F, Ono Y, Solanki R and Tweet D J 2004 Appl. Phys. Lett. 84 398
13. Chen Y S and Krupka D C 1972 J. Appl. Phys. 43 4089
14. Chen H-S, Chiu J-J and Perng T-P 2001 Mater. Phys. Mech. 4 62
15. Delley B and Steigmeier E F 1995 Appl. Phys. Lett. 67 2370
16. Ma D D D, Lee C S, Au F C K, Tong S Y and Lee S T 2003 Science 299 1874
17. Sham T K, Naftel S J, Kim P S G, Sammynaiken R, Tang Y H, Coulthard I, Moewes A, Freeland J W, Hu Y F and Lee S T 2004 Phys. Rev. B 70 045313