Observation and control of electrochemical etching effects in the fabrication of InAsAlSbGaSb heterostructure devices

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 26, Issue 3, 2008, Pages 1025-1029

  Su, Ning ^a   Tang, Yong ^a   Zhang, Ze ^a   Kuech, T F ^b   Fay, P ^a  

^a University of Notre Dame   (United States)

^b University of Wisconsin Madison   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AMMONIUM HYDROXIDE; ETCH MASKS; ETCH RATE; HETEROSTRUCTURE DEVICES;

ELECTROCHEMICAL ELECTRODES; ELECTROCHEMICAL ETCHING; MASKS; SEMICONDUCTING INDIUM COMPOUNDS; SURFACE PROPERTIES;

HETEROJUNCTIONS;

EID: 44649171497     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.2924328     Document Type: Article

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