Impact of recess-etching-assisting resist-openings on the shapes of gate grooves for short gate length inaias/ingaas heterojunction FET's

IEEE Transactions on Electron Devices

Volumn 46, Issue 5, 1999, Pages 833-839

  Xu, Dong ^a  

^a NTT CORPORATION   (Japan)

Author keywords

Electrochemical processes; Etching; Modfet's; Semiconductor device fabrication; Semiconductor heterojunctions

Indexed keywords

ELECTROCHEMICAL ELECTRODES; ELECTROCHEMISTRY; ETCHING; HETEROJUNCTIONS; NICKEL; OXIDATION; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTOR DEVICE MANUFACTURE;

HETEROSTRUCTURE FIELD-EFFECT TRANSISTORS (HFET); INDIUM ALUMINUM ARSENIDE;

FIELD EFFECT TRANSISTORS;

EID: 0032663276     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.760387     Document Type: Article

References (15)

1. L. D. Nguyen A. S. Brown M. A. Thompson and L. M. Jelloian 50-nm self-aligned-gate pseudomorphic AlInAs/GaInAs high electron mobility transistor IEEE Trans. Electron. Devices vol. 39 pp. 2007-2014 Sept. 1992.
2. max IEEE Microwave Guided Wave Lett. vol. 5 pp. 230-232 1995.
3. Y. C. Chen R. Lai E. Lin H. Wang T. Block H. C. Yen D. C. Streit W. Jones P. H. Liu R. M. Dia T.-W. Huang P.-P. Huang and K. Stamper A 94-GHz 130-mW InGaAs/InAlAs/InP HEMT high-power MMIC amplifier IEEE Microwave Guided Wave Lett. vol. 7 pp. 133-135 1997.
4. T. Enoki Ultra-high speed integrated circuits using InP-based high-electron-mobility transistors in Ext. Abstr. 1997 Int. Conf. Solid State Devices and Materials Hamamatsu Japan pp. 422-423.
5. Y. Kwon M. Tutt G. I. Ng D. Pavlidis T. Brock and P. Marsh Gate-recess and device geometry impact on the microwave performance and noise properties of 0.1 μm InAlAs/InGaAs HEMT's in Proc. 13th Biennial Conf. Advanced Concepts in High Speed Semiconductor Devices and Circuits Cornell Univ.Ithaca NY 1991 pp. 141-150.
6. D. Xu H. Heiß S. Kraus M. Sexl G. Böhm G. Tränkle G. Weimann and G. Abstreiter 0.15 μm double modulation doped InAs-inserted-channel MODFETs: Gate recess for optimum RF performances Electron. Lett. vol. 33 pp. 532-533 1997.
7. 2 S/mm transconductance InAs-inserted-channel modulation doped field effect transistors with a very close gate-to-channel separation of 14.5 nm Jpn. J. Appl. Phys. vol. 36 pp. L470-472 1997.
8. max of 350 GHz in IEDM Tech. Dig. 1988 pp. 172-175.
9. K. Y. Hur R. A. McTaggart A. B. Miller W. E. Hoke P. J. Lemonias and L. M. Aucoin DC and RF characteristics of double recessed and double pulse doped AlInAs/GalnAs/InP HEMT's Electron. Lett. vol. 31 pp. 135-136 1995.
10. M. Hagio Electrode reaction of GaAs metal semiconductor field-effect transistors in deionized water J. Electrochem. Soc. vol. 140 pp. 2402-2405 1993.
11. G. M. Metze S. PcPhilmy and P. Laux The effects of electrochemically-induced etching nonuniformities on microwave field effect transistors IEEE Electron Device Lett. vol. 16 pp. 23-25 Jan. 1995.
12. Y. Nitta T. Ohshima R. Shigemasa S. Nishi and T. Kimura Control of electro-chemical etching for uniform 0.1 μm gate formation of HEMT in IEDM Tech. Dig. 1996 pp. 47-50.
13. T. Enoki M. Tomizawa Y. Umeda and Y. Ishii 0.05-μm-gate InAlAs/InGaAs high electron mobility transistor and reduction of its short-channel effects Jpn. J. Appl. Phys. vol. 33 pp. 798-803 1994.
14. W. M. Latimer Oxidation Potential 2nd. ed. 1952.
15. R. E. Williams Gallium Arsenide Processing Techniques. Norwood MA: Artech House 1984 pp. 118-119.