Fabrication of monolithically-integrated InAlAs/InGaAs/InP HEMTs and InAs/AlSb/GaSb resonant interband tunneling diodes

IEEE Transactions on Electron Devices

Volumn 48, Issue 6, 2001, Pages 1282-1284

  Fay, P ^a   Jiang, Lu ^a   Xu, Y ^a   Bernstein, G H ^a   Chow, D H ^b   Schulman, J N ^b   Dunlap, H L ^b   De Los Santos, H J ^c  

^a University of Notre Dame   (United States)

^b Hughes Aircraft Co   (United States)

^c BOEING COMPANY   (United States)

Author keywords

Aluminum antimonide; Gallium antimonide; High electron mobility transistor (HEMT); Indium arsenide; Indium phosphide; Monolithic integration; Resonant tunneling; Resonant tunneling diode (RTD)

Indexed keywords

CARRIER MOBILITY; CURRENT DENSITY; ELECTRIC POTENTIAL; MOLECULAR BEAM EPITAXY; MONOLITHIC INTEGRATED CIRCUITS; RESONANT TUNNELING; SEMICONDUCTING INDIUM COMPOUNDS; SUBSTRATES;

RESONANT INTERBAND TUNNELING DIODES (RITD);

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 0035366332     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.925263     Document Type: Article

References (8)

1. 0.47 As/AlAs resonant tunnelling diodes with switching time of 1.5 ps
2. Static frequency divider featuring reduced circuit complexity by utilizing resonant tunneling diodes in combination with HEMTs
3. A monolithic 4-bit 2-Gsps resonant tunneling analog-to-digital converter
4. Resonant-tunneling diode and HEMT logic circuits with multiple thresholds and multilevel output
5. 12 GHz clocked operation of ultra-low-power interband resonant tunneling diode pipelined logic gates
6. Modeling of ultra-low-power AlSb/InAs HEMT-RTD circuits
7. 18.5-GHz bandwidth monolithic MSM/MODFET photoreceiver for 1.55-μm wavelength communication system
8. Design, fabrication, and performance of high-speed monolithically integrated InAlAs/InGaAs/InP MSM/HEMT photoreceivers