Depletion- and enhancement-mode modulation-doped field-effect transistors for ultrahigh-speed applications: An electrochemical fabrication technology

IEEE Transactions on Electron Devices

Volumn 47, Issue 1, 2000, Pages 33-43

  Xu, Dong ^a,b   Suemitsu, Tetsuya ^a   Osaka, Jiro ^a   Umeda, Yohtaro ^a   Yamane, Yasuro ^a   Ishii, Yasunobu ^a   Ishii, Tetsuyoshi ^a,c   Tamamura, Toshiaki ^a,c  

^a NTT CORPORATION   (Japan)

^b Global Communication Semiconductors Inc   (United States)

^c Kashino Diverse Brain Research Laboratory of NTT Communication Science Laboratories   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ASPECT RATIO; ELECTROCHEMISTRY; ELECTRODES; ELECTRON BEAM LITHOGRAPHY; EPITAXIAL GROWTH; ETCHING; FULLERENES; HETEROJUNCTIONS; MILLIMETER WAVE DEVICES; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DOPING; TRANSCONDUCTANCE;

DEPLETION MODE MODFET; ELECTROCHEMICAL ETCHING; ELECTROCHEMICAL FABRICATION TECHNOLOGY; ENHANCEMENT MODE MODFET; HIGH SPEED CIRCUITS; MODULATION DOPED FIELD EFFECT TRANSISTORS; OHMIC ELECTRODES; SHORT CHANNEL EFFECTS;

FIELD EFFECT TRANSISTORS;

EID: 0033897120     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.817564     Document Type: Article

References (35)