Control of Electro-chemical Etching for Uniform 0.1μm Gate Formation of HEMT

Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 1996, Pages 47-50

  Nitta, Koshiki ^a   Ohshima, Tomoyuki ^a   Shigemasa, Ryoji ^a   Nishi, Seiji ^a   Kimura, Tamotsu ^a  

^a OKI ELECTRIC INDUSTRY CO   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTROCHEMICAL ETCHING; SEMICONDUCTOR DEVICE MANUFACTURE; ELECTROCHEMISTRY; ETCHING; FABRICATION; ION IMPLANTATION; OXYGEN; PHOSPHORIC ACID; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING INDIUM COMPOUNDS; SILICON NITRIDE;

ANOMALIES' EFFECTS; ANOMALOUS PHENOMENA; CHANNEL REGION; CONDITION; DEVICE CHARACTERISTICS; ELECTRO-CHEMICAL ETCHING; ETCHED SURFACE; GATE RECESS ETCHING; NON FLATS; OXYGEN IONS;

HIGH ELECTRON MOBILITY TRANSISTORS;

ALUMINUM GALLIUM ARSENIDE; ANOMALOUS PHENOMENON; FLAT ETCHED SURFACE; GATE RECESS ETCHING; INDIUM GALLIUM ARSENIDE;

EID: 0030410645     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IEDM.1996.553119     Document Type: Conference Paper

References (6)

1. L. D. Nguyen, A. S. Brown, M. A. Thompson, L. M. Jelloian, IEEE. Trans. Electron. Dev. ,39,2007 (1992).
2. H. Wang, T. N. Ton, K. L. Tan, G. S. Dow, T. H. Chen, K.W.Chang, J. Berenz, B. Allen, P. Liu, D. Streit, G. Hayashibara,and L. C. T. Liu, IEEE MTT-S Digest, 803 (1993).
3. M.Funabashi, K. Hosoya, K. Ohta, N. Iwata and M. Kuzuhara, GaAs IC Symp. Digest, 382 (1993).
4. G. M. Metze, S. McPhilmy and P. Laux, IEEE Electron. Dev. Lett., l6,23(1995).
5. M. Hagio, J.Electrochem.Soc., 140,2402 (1993).
6. T. Asano, R. D. Atanassov, H. Ishiwara and S. Furukawa