Precisely controlled anodic etching for processing of GaAs-based quantum nanostructures and devices

Journal De Physique. IV : JP

Volumn 132, Issue , 2006, Pages 249-253

  Shiozaki, N ^a   Sato, T ^a   Akazawa, M ^a   Hasegawa, H ^a  

^a HOKKAIDO UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ANODIC OXIDATION; ATOMIC FORCE MICROSCOPY; ELECTRIC POTENTIAL; ETCHING; NANOSTRUCTURED MATERIALS; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR MATERIALS; X RAY PHOTOELECTRON SPECTROSCOPY;

ANODIZATION VOLTAGE; GAAS-BASED QUANTUM NANOSTRUCTURES; SEMICONDUCTOR INTERFACES;

INTERFACES (MATERIALS);

EID: 33744909358     PISSN: 11554339     EISSN: 17647177     Source Type: Conference Proceeding    
DOI: 10.1051/jp4:2006132047     Document Type: Conference Paper

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