Submicron processing of InAs based quantum wells: A new, highly selective wet etchant for AISb

Applied Physics Letters

Volumn 70, Issue 11, 1997, Pages 1435-1437

  Morpurgo, A F ^a   Van Wees, B J ^a   Klapwijk, T M ^a   Borghs, G ^b  

^a UNIVERSITY OF GRONINGEN   (Netherlands)

^b IMEC   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0037547303     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.118599     Document Type: Article

References (20)

1. C. R. Bolognesi, J. D. Werking, E. J. Caine, H. Kroemer, and E. L. Hu, IEEE Electron Device Lett. 14, 13 (1993); J. Werking. G. Turtle, C. Nguyen, E. L. Hu, and H. Kroemer, Appl. Phys. Lett. 57, 905 (1990).
2. C. R. Bolognesi, J. D. Werking, E. J. Caine, H. Kroemer, and E. L. Hu, IEEE Electron Device Lett. 14, 13 (1993); J. Werking. G. Turtle, C. Nguyen, E. L. Hu, and H. Kroemer, Appl. Phys. Lett. 57, 905 (1990).
3. A. Dimoulas, J. P. Heida, B. J. van Wees, T. M. Klapwijk, W. v. d. Graaf, and G. Borghs, Phys. Rev. Lett. 74, 602 (1995); S. G. den Hartog, C. M. A. Kapteyn, B. J. van Wees, T. M. Klapwijk, and G. Borghs, Phys. Rev. Lett. 76, 4592 (1996).
4. A. Dimoulas, J. P. Heida, B. J. van Wees, T. M. Klapwijk, W. v. d. Graaf, and G. Borghs, Phys. Rev. Lett. 74, 602 (1995); S. G. den Hartog, C. M. A. Kapteyn, B. J. van Wees, T. M. Klapwijk, and G. Borghs, Phys. Rev. Lett. 76, 4592 (1996).
5. E. I. Rashba, Fiz. Tverd. Tela. 2, 1224 (1960); [Sov. Phys. Solid State 2, 1109 (1960)].
6. E. I. Rashba, Fiz. Tverd. Tela. 2, 1224 (1960); [Sov. Phys. Solid State 2, 1109 (1960)].
7. A. G. Aronov and Y. B. Lyanda-Geller, Phys. Rev. Lett. 70, 343 (1993); Y. Lyanda-Geller, Phys. Rev. Lett. 71, 657 (1993).
8. A. G. Aronov and Y. B. Lyanda-Geller, Phys. Rev. Lett. 70, 343 (1993); Y. Lyanda-Geller, Phys. Rev. Lett. 71, 657 (1993).
9. J.-P. Cheng, J. Kono, B. D. McCombe, I. Lo, W. C. Mitchel, and C. E. Stutz, Phys. Rev. Lett. 74, 450 (1995).
10. Compared to reactive ion etching, wet etching is better in that it does not severely damage the edges of the material.
11. The best known selective etchants for InAs are solutions based on citric acid, succinic acid, or acetic acid.
12. C. Nguyen, University of Santa Barbara, Ph.D. thesis, 1993.
13. A. F. Morpurgo, S. Holl, B. J. van Wees, T. M. Klapwijk, and G. Borghs, Phys. Rev. Lett, (to be published).
14. A. F. Morpurgo, J. P. Heida, B. J. van Wees, T. M. Klapwijk, and G. Borghs (unpublished).
15. 2 is added to 15 parts of the above solution.
16. 2O diluted in isopropanol also acts as PMMA developer.
17. H. van Houten, C. W. J. Beenakker, P. H. M. van Loodsrecht, T. J. Thornton, A. Ahmed, M. Pepper, C. T. Foxon, and J. J. Harris, Phys. Rev. B 37, 8534 (1988).
18. From the value of magnetic field at which the crossover occurs we can determine the effective width of the channel, which results to be in close agreement with the value obtained from SEM micrograph of the samples.
19. C. W. J. Beenakker and H. van Houten, Solid State Phys. 44, 124 (1991).
20. T. J. Thornton, M. L. Roukes, A. Scherer, and B. P. van de Gaag, Phys. Rev. Lett. 63, 2128 (1989).