In situ Raman spectroscopy of the selective etching of antimonides in GaSb/AlSb/InAs heterostructures

Semiconductor Science and Technology

Volumn 13, Issue 4, 1998, Pages 399-403

  Gatzke, C ^a   Webb, S J ^a   Fobelets, K ^a   Stradling, R A ^a  

^a IMPERIAL COLLEGE LONDON   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

ETCHING; RAMAN SPECTROSCOPY; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING ANTIMONY COMPOUNDS; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR DEVICE MANUFACTURE;

DEKTAK STEPPER; SELECTIVE ETCHING;

HETEROJUNCTIONS;

EID: 0032046159     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/13/4/008     Document Type: Article

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