InAlAsSb/InGaSb double heterojunction bipolar transistor

Electronics Letters

Volumn 41, Issue 6, 2005, Pages 370-371

  Magno, R ^a   Boos, J B ^a   Campbell, P M ^a   Bennett, B R ^a   Glaser, E R ^a   Tinkham, B P ^a   Ancona, M G ^a   Hobart, K D ^a   Park, D ^a   Papanicolaou, N A ^a  

^a NAVAL RESEARCH LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; ETCHING; MOLECULAR BEAM EPITAXY; OHMIC CONTACTS; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DOPING; SUBSTRATES;

COLLECTOR CURRENTS; EMITTER-BASE VOLTAGES; EMITTERS; PARASITIC RESISTANCES;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 20144386908     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:20058107     Document Type: Article

References (8)

1. Magno, R., Bennett, B.R., Ikossi, K., Ancona, M.G., Glaser, E.R., Papanicolaou, N., Boos, J.B., Shanabrook, B.V., and Guiterrez, A.: 'Antimony-based quaternary alloys for high-speed low-power electronic devices'. Proc. IEEE Lester Eastman Conf. on High Performance Devices 2002, in Leoni III, R.E. (Ed.) (IEEE, Piscataway, NJ, USA, 2003), pp. 288-296
2. Averett, K.L., Maimon, S., Wu, X., Koch, M.W., and Wicks, G.W.: 'InAs-based bipolar transistors grown by molecular beam epitaxy', J. Vac. Sci. Technol. B, 2002, 20, (3), pp. 1213-1216
3. Averett, K.L., Wu, X., Koch, M.W., and Wicks, G.W.: 'Low-voltage InAsP/InAs HBT and metamorphic InAs BJT devices grown by molecular beam epitaxy', J. Cryst. Growth, 2003, 251, (1-4), pp. 852-857
4. Thomas III, S., Elliott, K., Chow, D.H., Shi, B., Deelman, P., Brewer, P., Arthur, A., Rajavel, R., Fields, C.H., and Madhav, M.: 'Fabrication and performance of InAs-based heterojunction bipolar transistors'. Proc. Int. Conf. IPRM, IEEE, Piscataway, NJ, USA, 2003, pp. 26-31
5. Monier, C., Sawdai, C., Cavus, A., Sandhu, R., Lange, M., Wang, J., Yamamoto, J., Hsing, R., Hayashi, S., Noori, A., Block, T., Goorsky, M.S., and Gutierrez-Aitken, A.: 'High indium content metamorphic (In,Al)As/(In,Ga)As heterojunction bipolar transistors'. Proc. Int. Conf. IPRM, IEEE, Piscataway, NJ, USA, 2003, pp. 32-35
6. Vurgaftman, I., Meyer, J.R., and Ram-Mohan, L.R.: 'Band parameters for III-V compound semiconductors and their alloys', J. Appl. Phys., 2001, 89, pp. 5815-5875
7. Wang, S.H., Mohney, S.E., Hull, B.A., and Bennett, B.R.: 'Design of a shallow thermally stable ohmic contact to p-type InGaSb', J. Vac. Sci. Technol. B, 2003, 21, (2), pp. 633-640
8. 0.47As/InP metamorphic double heterojunction bipolar transistors on GaAs substrates'. Proc. Int. Conf. IPRM, IEEE, Piscataway, NJ, USA, 2003, pp. 145-148