Impact of stochastic mismatch on measured SRAM performance of FinFETs with resist/spacer-defined fins: Role of line-edge-roughness

Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 2006, Pages

  Dixit, A ^a,b   Anil, K G ^a   Baravelli, E ^a   Roussel, P ^a   Mercha, A ^a   Gustin, C ^a   Bamal, M ^a,b   Grossar, E ^a,b   Rooyackers, R ^a   Augendre, E ^a   Jurczak, M ^a   Biesemans, S ^a   De Meyer, K ^a,b  

^a Imec   (Belgium)

^b UNIVERSITY OF LEUVEN   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

APPLICATIONS.; FIN DENSITY; FINFETS; GA TE LENGTHS; LINE-EDGE ROUGHNESS; PROCESS VARIATIONS; STATIC NOISE;

ELECTRON DEVICES; STATIC RANDOM ACCESS STORAGE; STOCHASTIC PROGRAMMING;

FINS (HEAT EXCHANGE);

EID: 46049109754     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IEDM.2006.346884     Document Type: Conference Paper

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