On the FinFET extension implant energy

IEEE Transactions on Nanotechnology

Volumn 2, Issue 4, 2003, Pages 285-290

  Gossmann, H J L ^a   Agarwal, A ^a   Parrill, Tom ^a   Rubin, L M ^a   Poate, J M ^a  

^a AXCELIS TECHNOLOGIES   (United States)

Author keywords

Double gate mosfet; Extension implant; Finfet; MOSFET; Semiconductor device and process modeling; Spike annealing, ultrashallow junction

Indexed keywords

CMOS INTEGRATED CIRCUITS; COMPUTER SIMULATION; ELECTRIC CURRENTS; ELECTRODES; GATES (TRANSISTOR); SEMICONDUCTOR DEVICES; SEMICONDUCTOR DOPING; SEMICONDUCTOR JUNCTIONS;

EXTENSION-IMPLANTS; SPIKE-ANNEALING; ULTRASHALLOW JUNCTIONS;

MOSFET DEVICES;

EID: 3042762658     PISSN: 1536125X     EISSN: None     Source Type: Journal    
DOI: 10.1109/TNANO.2003.820783     Document Type: Conference Paper

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