|
Volumn 97, Issue 10, 2005, Pages
|
Crystallization in HfO 2 gate insulators with in situ annealing studied by valence-band photoemission and x-ray absorption spectroscopy
|
Author keywords
[No Author keywords available]
|
Indexed keywords
DOUBLE-PEAK STRUCTURE;
GATE INSULATORS;
GATE VOLTAGE;
VALENCE-BAND PHOTOEMISSION;
ABSORPTION SPECTROSCOPY;
ANNEALING;
CMOS INTEGRATED CIRCUITS;
CRYSTALLIZATION;
HAFNIUM COMPOUNDS;
PHOTOEMISSION;
TRANSMISSION ELECTRON MICROSCOPY;
X RAY SPECTROSCOPY;
GATES (TRANSISTOR);
|
EID: 21044444062
PISSN: 00218979
EISSN: None
Source Type: Journal
DOI: 10.1063/1.1899228 Document Type: Article |
Times cited : (39)
|
References (15)
|