Annealing-time dependence in interfacial reaction between poly-Si electrode and HfO2/Si gate stack studied by synchrotron radiation photoemission and x-ray absorption spectroscopy

Applied Physics Letters

Volumn 89, Issue 1, 2006, Pages

  Takahashi, H ^a   Okabayashi, J ^a   Toyoda, S ^a   Kumigashira, H ^a   Oshima, M ^a   Ikeda, K ^b   Liu, G L ^b   Liu, Z ^b   Usuda, K ^b  

^a UNIVERSITY OF TOKYO   (Japan)

^b SEMICONDUCTOR TECHNOLOGY ACADEMIC RESEARCH CENTER   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ABSORPTION SPECTROSCOPY; ANNEALING; ELECTRODES; PHOTOEMISSION; REACTION KINETICS; SURFACE CHEMISTRY; SYNCHROTRON RADIATION;

GATE DIELECTRICS; GATE STACKS; SILICIDATION; X RAY ABSORPTION SPECTROSCOPY;

POLYSILICON;

EID: 33745801074     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2219126     Document Type: Article

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