Formation of reliable HfO2/HfSixOy gate-dielectric for metal-oxide-semiconductor devices

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 41, Issue 11 B, 2002, Pages 6904-6907

  Quan, Yong Chun ^a   Lee, Jang Eun ^a   Kang, Hyeoksu ^a   Roh, Yonghan ^a   Jung, Donggeun ^a   Yang, Cheol Woong ^a  

^a Sungkyunkwan University   (South Korea)

Author keywords

Gate oxides; HfO2; HfSixOy; High k; MOS; XPS

Indexed keywords

CURRENT DENSITY; MOS DEVICES; OXIDATION; SILICON; THIN FILMS; TRANSMISSION ELECTRON MICROSCOPY;

GATE OXIDES; HFO2; HFSIXOY; HIGH-K; MOS;

SEMICONDUCTOR DEVICES;

EID: 4344700431     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/JJAP.41.6904     Document Type: Article

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