Fabrication of hafnium silicate films by plasma-enhanced chemical vapor deposition

Proceedings of the International Symposium on Electrical Insulating Materials

Volumn , Issue , 2001, Pages 483-486

  Kato, Hiromitsu ^a   Nango, Tomohiro ^a   Miyagawa, Takeshi ^a   Katagiri, Takahiro ^a   Ohki, Yoshimichi ^a   Seol, Kwang Soo ^a   Takiyama, Makoto ^a  

^a WASEDA UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC PROPERTIES; FILMS; INTERFACES (MATERIALS); PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; STRUCTURE (COMPOSITION); THERMODYNAMIC STABILITY; TRANSPORT PROPERTIES; VAPORIZATION;

DEPOSITED FILMS; HALNIUM SILICATE; SILICATE LAYERS;

HAFNIUM COMPOUNDS;

EID: 0035720781     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (12)

1. The electronic structure at the atomic scale of ultrathin gate oxides
2. Reliability projection for ultra-thin oxides at low voltage
3. 2
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6. Thermal stability and electrical characteristics of ultrathin hafnium oxide gate dielectric reoxidized with rapid thermal annealing
7. 2 gate dielectric deposited directly on Si
8. 3 gate dielectric with equivalent oxide thickness of 5 Å
9. Fabrication and characterization of Zr-oxide-dielectrics MIS structure
10. Defects and optical absorption bands induced by surplus oxygen in high-purity synthetic silica
11. 4-p-Si capacitor grown by low-pressure chemical vapor deposition