Imaging of trapped charge in SiO2 and at the SiO2-Si interface

Applied Physics Letters

Volumn 78, Issue 25, 2001, Pages 3998-4000

  Ludeke, R ^a   Cartier, E ^a  

^a IBM T J WATSON RESEARCH CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0038974563     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1380396     Document Type: Article

References (9)

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2. K. Fukui, H. Onishi, and Y. Iwasawa. Appl. Surf. Sci. 140, 259 (2000).
3. E. H. Poindexter, P. J. Caplan, B. E. Deal, and R. R. Razouk, J. Appl. Phys. 52, 879 (1981).
4. B. Cartier and J. H. Stathis, Appl. Phys. Lett. 69, 103 (1996).
5. T. R. Albrecht, P. Grütter, D. Horne, and D. Rugar, J. Appl. Phys. 69, 668 (1991).
6. 2, which decreases the slope. C is an effective tip-sample capacitance.
7. J. D. Jackson, Classical Electrodynamics (Wiley, New York, 1962).
8. The application of a bias will affect F', changing it by ∼± 25% for changes of ± 0.5. V. Additional force gradients arise from the tip-surface interaction, see Ref. 6
9. b an increasingly negative local potential lowered (darkened) the Kelvin image contrast. This convention results in a darkened image contrast for increasing positive potentials under positive bias. That is, under negative bias electrons image as holes (dark areas) and positive charge as "protrusions," with the reverse contrast occurring for positive bias.