Thin-film inverters based on high mobility microcrystalline silicon thin-film transistors

Solid-State Electronics

Volumn 52, Issue 6, 2008, Pages 914-918

  Chan, Kah Yoong ^a,b   Bunte, Eerke ^b   Knipp, Dietmar ^a   Stiebig, Helmut ^b  

^a JACOBS UNIVERSITY BREMEN   (Germany)

^b FORSCHUNGSZENTRUM JÜLICH   (Germany)

Author keywords

Inverter; Large area electronics; Microcrystalline silicon; TFTs; Thin film transistors

Indexed keywords

ELECTRIC CONTACTS; ELECTRIC INVERTERS; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; THIN FILM TRANSISTORS;

DISPLAY BACKPANELS; LARGE AREA ELECTRONICS;

MICROCRYSTALLINE SILICON;

EID: 42749095319     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2008.01.015     Document Type: Article

References (29)

1. Tsukada T. Technology and applications of amorphous silicon. In: Street R.A. (Ed). Springer series in material science vol. 37 (2000), Springer-Verlag, Berlin, Germany
2. Knipp D., Street R.A., Stiebig H., Krause M., Lu J.P., Ready S., et al. Vertically integrated amorphous silicon color sensor Arrays. IEEE Trans Electron Dev 53 7 (2006) 1551-1558
3. Choi Y.J., Kwak W.K., Cho K.S., Kim S.K., and Jang J. Hydrogenated amorphous silicon thin-film transistor with a thin gate insulator. IEEE Electron Dev Lett 21 1 (2000) 18-20
4. Wong W.S., Ready S.E., Lu J.P., and Street R.A. Hydrogenated amorphous silicon thin-film transistor arrays fabricated by digital lithography. IEEE Electron Dev Lett 24 9 (2003) 577-579
5. Stannowski B., Schropp R.E.I., Wehrspohn R.B., and Powell M.J. Amorphous-silicon thin-film transistors deposited by VHF-PECVD and hot-wire CVD. J Non-Cryst Solids 299-302 (2002) 1340-1344
6. Kavak H., and Shanks H. Stability of hydrogenated amorphous silicon thin-film transistors on polyimide substrates. Solid-State Electron 49 (2005) 578-584
7. Powell M.J. Charge trapping instabilities in amorphous silicon-silicon nitride thin film transistors. Appl Phys Lett 43 (1989) 597-599
8. Stiebig H., Moulin E., and Rech B. Photodetectors based on amorphous and microcrystalline silicon. Thin Solid Films 515 19 (2007) 7522-7525
9. Cheng I.C., and Wagner S. Hole and electron field-effect mobilities in nanocrystalline silicon deposited at 150 °C. Appl Phys Lett 80 3 (2002) 440-442
10. Lee C.H., Sazonov A., and Nathan A. High-mobility nanocrystalline silicon thin-film transistors fabricated by plasma-enhanced chemical vapor deposition. Appl Phys Lett 86 (2005) 222106
11. Saboundji A., Coulon N., Gorin A., Lhermite H., Mohammed-Brahim T., Fonrodona M., et al. Top-gate microcrystalline silicon TFTs processed at low temperature (<200 °C). Thin Solid Films 487 (2005) 227-231
12. Chan K.Y., Bunte E., Stiebig H., and Knipp D. Influence of contact effect on the performance of microcrystalline silicon thin-film transistors. Appl Phys Lett 89 (2006) 203509
13. Teng L.H., and Anderson W.A. Thin film transistors on nanocrystalline silicon directly deposited by a microwave plasma CVD. Solid-State Electron 48 (2004) 309-314
14. Afentakis T., and Hatalis M. A simple analytical model for the dependence of the propagation delay of the polycrystalline silicon CMOS inverter on temperature. Solid-State Electron 46 (2002) 2301-2306
15. Chen Y., and Wagner S. Inverter made of complementary p and n channel transistors using a single directly deposited microcrystalline silicon film. Appl Phys Lett 75 8 (1999) 1125-1127
16. Lee CH, Sazonov A, Rad MRE, Chaji GR, Nathan A. Ambipolar thin-film transistors fabricated by PECVD nanocrystalline silicon. Mater Res Soc Symp Proc, vol. 910, 0910-A22-05; 2006.
17. Guo L., Kondo M., Fukawa M., Saitoh K., and Matsuda A. High rate deposition of microcrystalline silicon using conventional plasma-enhanced chemical vapor deposition. Jpn J Appl Phys 37 (1998) L1116-L1118
18. Rech B., Roschek T., Repmann T., Müller J., Schmitz R., and Appenzeller W. Microcrystalline silicon for large area thin film solar cells. Thin Solid Films 427 (2003) 157-165
19. Brammer T., and Stiebig H. Defect density and recombination lifetime in microcrystalline silicon absorbers of highly efficient thin-film solar cells determined by numerical device simulations. J Appl Phys 94 (2003) 1035-1042
20. Jun K.H., Carius R., and Stiebig H. Optical characteristics of intrinsic microcrystalline silicon. Phys Rev B 66 (2002) 115301
21. Ma Y., Yasuda T., and Lucovsky G. Formation of device-quality metal-insulator-semiconductor structures with oxide-nitride-oxide dielectrics by low-temperature plasma-assisted processing, combined with high-temperature rapid thermal annealing. J Vac Sci Technol A 11 4 (1993) 952-958
22. 2. J Appl Phys 74 4 (1993) 2638-2648
23. Chan K.Y., Bunte E., Stiebig H., and Knipp D. Influence of low temperature thermal annealing on the performance of microcrystalline silicon thin-film transistors. J Appl Phys 101 (2007) 074503
24. Hodges D.A., and Jackson H.G. Analysis and design of digital integrated circuits (1983), McGraw-Hill Book Company, New York p. 76
25. Cheng I.C., and Wagner S. Nanocrystalline silicon thin film transistors. IEE Proc - Circ Dev Syst 150 4 (2003) 339-344
26. Lee C.H., Striakhilev D., Tao S., and Nathan A. Top-gate TFTs using 13.56 MHz PECVD microcrystalline silicon. IEEE Electron Dev Lett 26 9 (2005) 637-639
27. Taghibakhsh F, Adachi MM, Karim KS. Hot-wire deposited nanocrystalline silicon TFTs on plastic substrates. Mater Res Soc Symp Proc, vol. 989, 0989-A20-A04; 2007.
28. EsmaeiliRad M.R., Li F., Sazonov A., and Nathan A. Stability of nanocrystalline silicon bottom-gate thin film transistors with silicon nitride gate dielectric. J Appl Phys 102 (2007) 064512
29. Cabarrocas P.R.I., Brenot R., Bulkin P., Vanderhaghen R., Drevillon B., and French I. Stable microcrystalline silicon thin-film transistors produced by the layer-by-layer technique. J Appl Phys 86 (1999) 7079-7082