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Volumn 21, Issue 1, 2000, Pages 18-20

Hydrogenated amorphous silicon thin-film transistor with a thin gate insulator

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS SILICON; GATES (TRANSISTOR); HYDROGENATION; SEMICONDUCTOR DEVICE STRUCTURES; THRESHOLD VOLTAGE;

EID: 0033882015     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/55.817439     Document Type: Article
Times cited : (10)

References (8)
  • 2
    • 0032185906 scopus 로고    scopus 로고
    • Coplanar amorphous silicon thin film transistor fabricated by inductively coupled plasma chemical vapor deposition
    • S. K. Kim, Y. J. Choi, K. S. Cho, and J. Jang. "Coplanar amorphous silicon thin film transistor fabricated by inductively coupled plasma chemical vapor deposition," J. Appl. Phys.. vol. 84, pp. 4006-4012, 1998.
    • (1998) J. Appl. Phys. , vol.84 , pp. 4006-4012
    • Kim, S.K.1    Choi, Y.J.2    Cho, K.S.3    Jang, J.4
  • 3
    • 0030378323 scopus 로고    scopus 로고
    • Short-channel amorphous silicon thin-film transistor
    • C. D. Kim and M. Matsumura, "Short-channel amorphous silicon thin-film transistor," IEEE Trans. Electron. Devices, vol. 43, pp. 2172-2176, 1996.
    • (1996) IEEE Trans. Electron. Devices , vol.43 , pp. 2172-2176
    • Kim, C.D.1    Matsumura, M.2
  • 6
    • 0029184509 scopus 로고
    • PECVD silicon nitride as a gate dielectric for amorphous silicon thin film transistor
    • Y. Kuo. "PECVD silicon nitride as a gate dielectric for amorphous silicon thin film transistor," J. Electrochem. Soc., vol. 142, pp. 186-190, 1995.
    • (1995) J. Electrochem. Soc. , vol.142 , pp. 186-190
    • Kuo, Y.1
  • 7
    • 21544438388 scopus 로고
    • Charge trapping instabilities in amorphous silicon nitride TFT
    • M. J. Powell, "Charge trapping instabilities in amorphous silicon nitride TFT," Appl. Phys. Lett., vol. 43, pp. 597-599, 1983.
    • (1983) Appl. Phys. Lett. , vol.43 , pp. 597-599
    • Powell, M.J.1
  • 8
    • 0026821485 scopus 로고
    • Plasma-enhanced chemical vapor deposition of silicon nitride
    • I. Kobayashi, T. Ogawa, and S. Hotta, "Plasma-enhanced chemical vapor deposition of silicon nitride," Jpn. J. Appl. Phys., vol. 31, pp. 336-342. 1992.
    • (1992) Jpn. J. Appl. Phys. , vol.31 , pp. 336-342
    • Kobayashi, I.1    Ogawa, T.2    Hotta, S.3


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.