Impact of Hf-precursor choice on scaling and performance of high-k gate dielectrics

ECS Transactions

Volumn 11, Issue 4, 2007, Pages 59-72

  Maes, Jan Willem ^a   Fedorento, Yanina ^a   Delabie, Annelies ^b   Ragnarsson, Lars Åke ^b   Swerts, Johan ^a   Nyns, Laura ^b   Van Elshocht, Sven ^b   Wang, Chang Gong ^c   Wilk, Glen ^c  

^a ASM BELGIUM   (Belgium)

^b IMEC   (Belgium)

^c ASM AMERICA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC LAYER DEPOSITION; CHLORINE COMPOUNDS; CRYSTALLIZATION; DIELECTRIC PROPERTIES; GATE DIELECTRICS; HAFNIUM OXIDES; HIGH-K DIELECTRIC; LEAKAGE CURRENTS; LOGIC GATES; NUCLEATION;

DENSITY SURFACES; DEPOSITION PROCESS; DEVICE PERFORMANCE; ELECTRICAL PERFORMANCE; GROWTH NUCLEATION; HIGH- K GATE DIELECTRICS; PROCESS PARAMETERS; PROCESS TEMPERATURE;

DIELECTRIC MATERIALS;

EID: 42549146885     PISSN: 19385862     EISSN: 19386737     Source Type: Conference Proceeding    
DOI: 10.1149/1.2779548     Document Type: Conference Paper

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