Application of HfSiON to deep-trench capacitors of sub-45-nm-node embedded dynamic random-access memory

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 45, Issue 4 B, 2006, Pages 3165-3169

  Ando, Takashi ^a   Sato, Naoyuki ^a   Hiyama, Susumu ^a   Hirano, Tomoyuki ^a   Nagaoka, Kojiro ^a   Abe, Hitoshi ^a   Okuyama, Atsushi ^a   Ugajin, Hajime ^a   Tai, Kaori ^a   Fujita, Shigeru ^a   Watanabe, Koji ^a   Katsumata, Ryota ^b   Idebuchi, Jun ^c   Suzuki, Takashi ^c   Hasegawa, Toshiaki ^a   Iwamoto, Hayato ^a   Kadomura, Shingo ^a  

^a SONY CORPORATION   (Japan)

^b SoC Research and Development Center   (Japan)

^c TOSHIBA CORPORATION   (Japan)

Author keywords

Atomic layer deposition (ALD); Deep trench (DT); Embedded DRAM (eDRAM); HfSiON

Indexed keywords

CAPACITANCE; CATALYSTS; EMBEDDED SYSTEMS; HAFNIUM; LEAKAGE CURRENTS; RANDOM ACCESS STORAGE; SILICON;

ATOMIC LAYER DEPOSITION (ALD); DEEP TRENCH (DT); EMBEDDED DRAM (EDRAM); HFSION;

CAPACITORS;

EID: 33744945262     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.45.3165     Document Type: Article

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