Influence of process parameters on leakage current of metal-organic based HfSiOx dielectrics

ECS Transactions

Volumn 3, Issue 3, 2006, Pages 37-40

  Avellan A ^a   Patz, M ^a   Erben, E ^a   Ivanov, A ^a   Kudelka, S ^a  

^a QIMONDA DRESDEN GMBH AND CO OHG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL IMPURITIES; ELECTRON TRAPS; ELECTRON TUNNELING; HAFNIUM COMPOUNDS; LEAKAGE CURRENTS;

HAFNIUM SILICATE; POOLE FRENKEL TUNNELING; TRAP DEPTH; TRAP DISTRIBUTION;

DIELECTRIC MATERIALS;

EID: 33846989032     PISSN: 19385862     EISSN: 19386737     Source Type: Conference Proceeding    
DOI: 10.1149/1.2355696     Document Type: Conference Paper

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