Coulomb blockade effects and conduction mechanism in extremely thin polycrystalline-silicon wires

Journal of Applied Physics

Volumn 91, Issue 8, 2002, Pages 5213-5220

  Kawamura, Kensaku ^a   Kidera, Toshirou ^a   Nakajima, Anri ^a   Yokoyama, Shin ^a  

^a HIROSHIMA UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CONDUCTION MECHANISM; COULOMB BLOCKADE EFFECTS; COULOMB OSCILLATION; ELECTRICAL CONDUCTION MECHANISMS; ELECTRONIC CONDUCTION; GRAIN SIZE; LOW TEMPERATURES; POLY-SI GRAINS; SINGLE-ELECTRON EFFECTS; TEMPERATURE DEPENDENCE; TRANSMISSION ELECTRON MICROSCOPY TEM; TUNNEL BARRIER;

CHEMICAL VAPOR DEPOSITION; GRAIN BOUNDARIES; PHOSPHORUS; SILICON; TRANSMISSION ELECTRON MICROSCOPY; WIRE;

ELECTRIC PROPERTIES;

EID: 0037091851     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1464650     Document Type: Article

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