Resonant tunneling in partially disordered silicon nanostructures

Europhysics Letters

Volumn 55, Issue 4, 2001, Pages 552-558

  Tsybeskov, L ^a   Grom, G F ^a   Krishnan, R ^a   Montes, L ^a   Fauchet, P M ^a   Kovalev, D ^b   Diener, J ^b   Timoshenko, V ^b   Koch, F ^b   McCaffrey, J P ^c   Baribeau, J M ^c   Sproule, G I ^c   Lockwood, D J ^c   Niquet, Y M ^d   Delerue, C ^d   Allan, G ^d  

^a University of Rochester   (United States)

^b TECHNICAL UNIVERSITY OF MUNICH   (Germany)

^c NATIONAL RESEARCH COUNCIL CANADA   (Canada)

^d Inst d'Electron Microelectronique   (France)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 18044365389     PISSN: 02955075     EISSN: None     Source Type: Journal    
DOI: 10.1209/epl/i2001-00451-1     Document Type: Article

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