Characterization of a porous silicon diode with efficient and tunable electroluminescence

Journal of Applied Physics

Volumn 80, Issue 10, 1996, Pages 5971-5977

  Lalic, Nenad ^a   Linnros, Jan ^a  

^a ROYAL INSTITUTE OF TECHNOLOGY   (Sweden)

Author keywords

[No Author keywords available]

Indexed keywords

CHARACTERIZATION; CHARGE CARRIERS; CRYSTAL STRUCTURE; CURRENT DENSITY; ELECTROLUMINESCENCE; EMISSION SPECTROSCOPY; ETCHING; PHOTOLUMINESCENCE; POROUS SILICON; QUANTUM EFFICIENCY; QUENCHING; SEMICONDUCTOR JUNCTIONS;

DECAY TIME CONSTANTS; POROUS SILICON DIODE; WAVELENGTH;

SEMICONDUCTOR DIODES;

EID: 0030287479     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.363594     Document Type: Review

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