Charge carrier transport in thermally oxidized metal/PS/p-Si and metal/PS/n-Si structures

Semiconductor Science and Technology

Volumn 19, Issue 1, 2004, Pages 100-105

  Yarkin, D G ^a   Balagurov, L A ^a   Bayliss, S C ^b   Zvyagin, I P ^c  

^a INSTITUTE OF RARE METALS   (Russian Federation)

^b DE MONTFORT UNIVERSITY   (United Kingdom)

^c MOSCOW STATE UNIVERSITY   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; CARRIER MOBILITY; CRYSTALLIZATION; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC CONDUCTIVITY; ELECTRIC SPACE CHARGE; ELECTRON DIFFRACTION; FERMI LEVEL; INTERFACES (MATERIALS); PHOTOLUMINESCENCE; SEMICONDUCTING SILICON COMPOUNDS; THERMOOXIDATION; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION ANALYSIS;

CARRIER TUNNELING; SPACE CHARGE LIMITED CURRENTS (SCLC);

POROUS SILICON;

EID: 0346009309     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/19/1/017     Document Type: Article

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