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Volumn 393, Issue 6684, 1998, Pages 443-445

Size-controlled percolation pathways for electrical conduction in porous silicon

Author keywords

[No Author keywords available]

Indexed keywords

SILICON;

EID: 0032482461     PISSN: 00280836     EISSN: None     Source Type: Journal    
DOI: 10.1038/30924     Document Type: Article
Times cited : (59)

References (18)
  • 14
    • 33745993837 scopus 로고    scopus 로고
    • 2 nm islands for single electron devices. J. Vac. Sci. TechnoL B 13. 2883-2887 (1995).
    • Chen, W. & Ahmed, H. Fabrication of and physics of 2 nm islands for single electron devices. J. Vac. Sci. TechnoL B 13. 2883-2887 (1995).
    • & Ahmed, H. Fabrication of and Physics of
    • Chen, W.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.