A high-performance polycrystalline silicon thin film transistor with a silicon nitride gate insulator

IEEE Transactions on Electron Devices

Volumn 45, Issue 12, 1998, Pages 2548-2551

  Lee, K H ^a   Park, J K ^a   Jang, Jin ^a  

^a Kyung Hee University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS SILICON; GATES (TRANSISTOR); POLYCRYSTALLINE MATERIALS; SEMICONDUCTING SILICON; SILICON NITRIDE; THRESHOLD VOLTAGE;

GATE INSULATORS; POLYCRYSTALLINE SILICON;

THIN FILM TRANSISTORS;

EID: 0032315927     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.735734     Document Type: Article

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