PBTI-associated high-temperature hot carrier degradation of nMOSFETs with metal-gate/high-κ dielectrics

IEEE Electron Device Letters

Volumn 29, Issue 4, 2008, Pages 389-391

  Lee, Kyong Taek ^a,b   Kang, Chang Yong ^c   Yoo, Ook Sang ^d   Choi, Rino ^e   Lee, Byoung Hun ^c   Lee, Jack C ^b   Lee, Hi Deok ^d   Jeong, Yoon Ha ^a  

^a Pohang University of Science and Technology (POSTECH)   (South Korea)

^b UNIVERSITY OF TEXAS AT AUSTIN   (United States)

^c SEMATECH   (United States)

^d Chungnam National University   (South Korea)

^e Inha University   (South Korea)

Author keywords

Hot carrier (HC); Metal gate high dielectrics; Positive bias temperature instability (PBTI)

Indexed keywords

GATE DIELECTRICS; HOT CARRIERS; PYROLYSIS; THERMODYNAMIC STABILITY; THRESHOLD VOLTAGE;

GATE LEAKAGE; POSITIVE BIAS TEMPERATURE INSTABILITY;

MOSFET DEVICES;

EID: 41749118706     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2008.918257     Document Type: Article

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