A Highly Manufacturable Low Power and High Speed HfSiO CMOS FET with Dual Poly-Si Gate Electrodes

Technical Digest - International Electron Devices Meeting

Volumn , Issue , 2003, Pages 639-642

  Iwamoto, Toshiyuki ^a   Ogura, Takashi ^a   Terai, Masayuki ^a   Watanabe, Hirohito ^a   Watanabe, Heiji ^a   Ikarashi, Nobuyuki ^a   Miyamura, Makoto ^a   Tatsumi, Toru ^a   Saitoh, Motofumi ^a   Morioka, Ayuka ^a   Watanabe, Koji ^a   Saito, Yukishige ^a   Yabe, Yuko ^a   Ikarashi, Taeko ^a   Masuzaki, Koji ^a   Mochizuki, Yasunori ^a   Mogami, Tohru ^a  

^a NEC CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC INSULATORS; INTERFACES (MATERIALS); MICROELECTRODES; MISFET DEVICES; OXIDATION; POLYSILICON; SILICA; THERMAL EFFECTS; TRANSMISSION ELECTRON MICROSCOPY;

CHANNEL ENGINEERING;

CMOS INTEGRATED CIRCUITS;

EID: 17644448947     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (8)

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7. Chang-Bong Oh et al., p.71, 2003.
8. T. Watanabe et al., VLSI Symp. Tech. Digest, p.19, 2003.