Ultra Low Power 6T-SRAM Chip with Improved Transistor Performance and Reliability by HfO2-Al2O3 High-k Gate Dielectric Process Optimization

Digest of Technical Papers - Symposium on VLSI Technology

Volumn , Issue , 2003, Pages 71-72

  Oh, Chang Bong ^a   Ryu, Hyuk Ju ^a   Kang, Hee Sung ^a   Oh, Myoung Hwan ^a   Lee, Jong Ho ^a   Lee, Nae In ^a   Lee, Hyun Woo ^a   Jun, Cheol Hee ^a   Kim, Young Wug ^a   Suh, Kwang Pyuk ^a  

^a SAMSUNG Electronics   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER MOBILITY; CMOS INTEGRATED CIRCUITS; HAFNIUM COMPOUNDS; RELIABILITY; STATIC RANDOM ACCESS STORAGE; THRESHOLD VOLTAGE; TRANSMISSION ELECTRON MICROSCOPY; ALUMINA; ALUMINUM NITRIDE; GATE DIELECTRICS; HAFNIUM OXIDES; HIGH-K DIELECTRIC; NITRIDES; OPTIMIZATION;

STATIC NOISE MARGINS (SNM);

GATES (TRANSISTOR); ALUMINUM OXIDE;

6T-SRAM; 6T-SRAMS; EQUIVALENT OXIDE THICKNESS; HIGH-K GATE DIELECTRICS; OXYNITRIDES; POST DEPOSITION ANNEALING; SRAM CHIP; TRANSISTOR PERFORMANCE; TRANSISTOR RELIABILITY; ULTRA-LOW POWER;

EID: 0141538342     PISSN: 07431562     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

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