Hole mobility enhancement of p-MOSFETs using global and local Ge-channel technologies

Materials Science and Engineering: B

Volumn 135, Issue 3, 2006, Pages 250-255

  Takagi, Shinichi ^a,c   Tezuka, T ^b   Irisawa, T ^b   Nakaharai, S ^b   Maeda, T ^a   Numata, T ^b   Ikeda, K ^b   Sugiyama, N ^b  

^a NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

^b MIRAI ASET   (Japan)

^c UNIVERSITY OF TOKYO   (Japan)

Author keywords

Epitaxy of thin films; Field effect; Germanium; Low field transport; Metal oxide semiconductor structures; Silicon

Indexed keywords

CMOS INTEGRATED CIRCUITS; GERMANIUM; HOLE MOBILITY; SILICON ON INSULATOR TECHNOLOGY; THIN FILMS;

EPITAXY OF THIN FILMS; FIELD EFFECT; LOW FIELD TRANSPORT; MOBILITY ENHANCEMENT;

MOSFET DEVICES;

EID: 33750729635     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mseb.2006.08.015     Document Type: Article

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