Low- and high-field electron-transport parameters for unstrained and strained Si1-xGex

IEEE Electron Device Letters

Volumn 18, Issue 6, 1997, Pages 264-266

  Bufler, F M ^a   Graf, P ^a   Meinerzhagen, B ^a,f   Adeline, B ^b   Rieger, M M ^c   Kibbel, H ^d   Fischer, G ^e  

^a UNIVERSITY OF BREMEN   (Germany)

^b Steria Transport Division   (France)

^c UNIVERSITY OF CAMBRIDGE   (United Kingdom)

^d DAIMLER AG   (Germany)

^e IHP   (Germany)

^f IEEE

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; ELECTRON TRANSPORT PROPERTIES; INTERFACES (MATERIALS); MONTE CARLO METHODS; SEMICONDUCTING GERMANIUM; SEMICONDUCTOR DEVICE MODELS; SEMICONDUCTOR DOPING;

SATURATION DRIFT VELOCITY; SILICON GERMANIUM ALLOYS;

SILICON ALLOYS;

EID: 0031170219     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/55.585350     Document Type: Article

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