Physically based modeling of dislocation loops in ion implantation processing in silicon

Materials Science and Engineering: B

Volumn 124-125, Issue SUPPL., 2005, Pages 404-408

  Castrillo, P ^a   Martin Bragado, I ^a,b   Pinacho, R ^a   Jaraiz, M ^a   Rubio, J E ^a   Mok, K R C ^a,c   Miguel Herrero, F J ^a   Barbolla, J ^a  

^a UNIVERSITY OF VALLADOLID   (Spain)

^b Synopsys GmbH   (Germany)

^c NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

Author keywords

Dislocation loops; Ion implantation; Monte Carlo simulator; 3 1 1 Defects

Indexed keywords

COMPUTER SIMULATION; DEFECTS; DIFFUSION; ION IMPLANTATION; MATHEMATICAL MODELS; MONTE CARLO METHODS; RECRYSTALLIZATION (METALLURGY);

DISLOCATION LOOPS; MONTE CARLO SIMULATOR; TRANSFORMATION RATE; {3 1 1}-DEFECTS;

SILICON;

EID: 27844581102     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mseb.2005.08.119     Document Type: Conference Paper

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