Ion-beam amorphization of semiconductors: A physical model based on the amorphous pocket population

Journal of Applied Physics

Volumn 98, Issue 4, 2005, Pages

  Mok, K R C ^a,b   Jaraiz, M ^b   Martin Bragado, I ^b,c   Rubio, J E ^b   Castrillo, P ^b   Pinacho, R ^b   Barbolla, J ^b   Srinivasan, M P ^a  

^a UNIVERSITY OF VALLADOLID   (Spain)

^b NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

^c Synopsys GmbH   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS POCKETS; BIMODAL DISTRIBUTION; ION-BEAM AMORPHIZATION; ION-IMPLANT DAMAGE STRUCTURE;

AMORPHIZATION; AMORPHOUS SILICON; CRYSTALLINE MATERIALS; HEAVY IONS; ION BEAMS; ION IMPLANTATION; PHASE TRANSITIONS;

SEMICONDUCTOR MATERIALS;

EID: 25144453269     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2014940     Document Type: Article

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