First-principles study of phosphorus diffusion in silicon: Interstitial- and vacancy-mediated diffusion mechanisms

Applied Physics Letters

Volumn 82, Issue 12, 2003, Pages 1839-1841

  Liu, Xiang Yang ^a   Windl, Wolfgang ^b   Beardmore, Keith M ^a   Masquelier, Michael P ^a  

^a MOTOROLA INC   (United States)

^b OHIO STATE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; BINDING ENERGY; CRYSTAL DEFECTS; GRADIENT METHODS; PROBABILITY DENSITY FUNCTION; SEMICONDUCTOR DOPING; SILICON; STRUCTURAL OPTIMIZATION;

INTERSTITIAL-ASSISTED DIFFUSION; VACANCY-MEDIATED DIFFUSION;

DIFFUSION IN SOLIDS;

EID: 0345314095     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1562342     Document Type: Article

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