Electrical activation of solid-phase epitaxially regrown ultra-low energy boron implants in Ge preamorphised silicon and SOI

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 237, Issue 1-2, 2005, Pages 107-112

  Hamilton, J J ^a   Collart, E J H ^b   Colombeau, B ^a   Jeynes, C ^a   Bersani, M ^c   Giubertoni, D ^c   Sharp, J A ^a   Cowern, N E B ^a   Kirkby, K J ^a  

^a UNIVERSITY OF SURREY   (United Kingdom)

^b Applied Materials UK Ltd   (United Kingdom)

^c ITC IRST   (Italy)

Author keywords

Boron; Dopant activation; Preamorphisation; Rapid thermal annealing; Silicon on insulator (SOI); Solid phase epitaxial (SPE) regrowth

Indexed keywords

ANNEALING; BORON; CMOS INTEGRATED CIRCUITS; DOPING (ADDITIVES); EPITAXIAL GROWTH; GERMANIUM; POINT DEFECTS; SILICON WAFERS; SUBSTRATES;

BORON IMPLANTS; ELECTRICAL ACTIVATION; SOLID PHASE EPITAXIAL (SPE); ULTRA-SHALLOW JUNCTIONS (USJ);

SILICON ON INSULATOR TECHNOLOGY;

EID: 23444460728     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.nimb.2005.04.112     Document Type: Conference Paper

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