High performance GaN pin rectifiers grown on free-standing GaN substrates

Electronics Letters

Volumn 42, Issue 22, 2006, Pages 1313-1314

  Limb, J B ^a   Yoo, D ^a   Ryou, J H ^a   Lee, W ^a   Shen, S C ^a   Dupuis, R D ^a  

^a GEORGIA INSTITUTE OF TECHNOLOGY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT DENSITY; ELECTRIC BREAKDOWN; GALLIUM NITRIDE; METALLORGANIC CHEMICAL VAPOR DEPOSITION; SUBSTRATES; VOLTAGE CONTROL;

BLOCKING VOLTAGE; MESA-STRUCTURE; VOLTAGE DROP;

ELECTRIC RECTIFIERS;

EID: 33750568003     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:20062261     Document Type: Article

References (9)

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2. Trivedi, M., and Shenai, K.: ' Performance evaluation of high-power wide band-gap semiconductor rectifiers ', J. Appl. Phys., 1999, 85, p. 6889-6897 10.1063/1.370208 0021-8979
3. -2 single chip bulk GaN p-i-n rectifier ', Solid-State Electron, 2004, 48, p. 359-361 10.1016/S0038-1101(03)00323-X 0038-1101
4. + ion implanted MPS bulk GaN diodes ', Solid-State Electron, 2004, 48, p. 827-830 10.1016/j.sse.2003.09.018 0038-1101
5. (Reactor manufactured by Thomas Swan Scientific Equipment Ltd, Cambridge, UK
6. (Obtained from Epichem Inc, Haverhill, MA
7. -2 '
8. Shelton, B.S., Zhu, T.G., Lambert, D.J.H., and Dupuis, R.D.: ' Simulation of the electrical characteristics of high-voltage mesa and planar GaN Schottky and pin rectifier ', IEEE Trans. Electron Devices, 2001, 45, p. 1498-1502 0018-9383
9. Chernyak, L., Osinsky, A., Temkin, H., Yang, J.W., Chen, Q., and Khan, M.A.: ' Electron beam induced current measurements of minority carrier diffusion length in gallium nitride ', Appl. Phys. Lett., 1996, 69, p. 2531-2533 10.1063/1.117729 0003-6951