Electron beam induced current, cathodoluminescence and scanning photoluminescence study of GaN layers

Journal of Crystal Growth

Volumn 210, Issue 1, 2000, Pages 220-225

  Avella, M ^a   De La Puente, E ^a   Jimenez, J ^a   Castaldini, A ^b   Cavallini, A ^b   Polenta, L ^b  

^a UNIVERSIDAD DE VALLADOLID   (Spain)

^b UNIVERSITY OF BOLOGNA   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

CATHODOLUMINESCENCE; CHARGE CARRIERS; CRYSTAL STRUCTURE; DIFFUSION IN SOLIDS; DISLOCATIONS (CRYSTALS); ELECTRIC CURRENTS; ELECTRON BEAMS; GRAIN SIZE AND SHAPE; NITRIDES; PHOTOLUMINESCENCE; SEMICONDUCTING FILMS;

ELECTRON BEAM INDUCED CURRENT (EBIC); GALLIUM NITRIDE; MINORITY CARRIER DIFFUSION LENGTH; SCANNING PHOTOLUMINESCENCE;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0033907945     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(99)00683-1     Document Type: Article

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