Electron-beam-induced-current study of defects in GaN; experiments and simulation

Journal of Physics Condensed Matter

Volumn 14, Issue 48, 2002, Pages 13069-13077

  Yakimov, E B ^a  

^a INSTITUTE OF MICROELECTRONICS TECHNOLOGY AND HIGH PURITY MATERIALS   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; DIFFUSION; DISLOCATIONS (CRYSTALS); ELECTRIC CURRENTS; ELECTRON BEAMS; ELECTRON ENERGY LEVELS;

DIFFUSION LENGTH; ELECTRON BEAM INDUCED CURRENT;

GALLIUM NITRIDE;

EID: 0037122021     PISSN: 09538984     EISSN: None     Source Type: Journal    
DOI: 10.1088/0953-8984/14/48/352     Document Type: Article

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