I-V characteristics of schottky/metal-insulator-semiconductor diodes with tunnel thin barriers

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 39, Issue 7 B, 2000, Pages 4521-4522

  Sugimura, Tomoyuki ^a   Tsuzuku, Tatsutoshi ^a   Kasai, Yuhki ^a   Iiyama, Kouichi ^a   Takamiya, Saburo ^a  

^a KANAZAWA UNIVERSITY   (Japan)

Author keywords

I V curve; MIS diode; MOS diode; Schottky diode; Tunnel current; Ultra thin insulating layer

Indexed keywords

CHARACTERIZATION; DENSITY (OPTICAL); ELECTRIC CURRENTS; ELECTRIC POTENTIAL; EXPERIMENTS; IMPURITIES; INSULATING MATERIALS; TEMPERATURE DISTRIBUTION; THICKNESS CONTROL;

CURRENT-VOLTAGE CHARACTERISTICS; EFFECTIVE BARRIER HEIGHT; I-LAYER THICKNESS; METAL-INSULATOR-SEMICONDUCTOR DIODES; TEMPERATURE DEPENDENCE; TUNNEL THIN BARRIERS;

SCHOTTKY BARRIER DIODES;

EID: 0034229710     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.39.4521     Document Type: Article

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