Depth profiling of chemical states and charge density in HfSiON by photoemission spectroscopy using synchrotron radiation

Applied Physics Letters

Volumn 92, Issue 8, 2008, Pages

  Tanimura, T ^a   Toyoda, S ^a,c   Kumigashira, H ^a,c   Oshima, M ^a,c   Ikeda, K ^b   Liu, G L ^b   Liu, Z ^b  

^a UNIVERSITY OF TOKYO   (Japan)

^b SEMICONDUCTOR TECHNOLOGY ACADEMIC RESEARCH CENTER   (Japan)

^c JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE DENSITY; CHARGE TRAPPING; DEPTH PROFILING; HAFNIUM COMPOUNDS; PHOTOELECTRON SPECTROSCOPY; SYNCHROTRON RADIATION;

BAND BENDING; CHEMICAL STATES; PHOTOEMISSION SPECTRA;

THIN FILMS;

EID: 40049096939     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2841705     Document Type: Article

References (21)

1. G. D. Wilk, R. M. Wallace, and J. M. Anthony, J. Appl. Phys. JAPIAU 0021-8979 10.1063/1.1361065 89, 5243 (2001).
2. J. Robertson, J. Vac. Sci. Technol. B JVTBD9 0734-211X 10.1116/1.591472 18, 1785 (2000).
3. S. Gopalan, K. Onishi, R. Nieh, C. S. Kang, R. Choi, H. J. Cho, S. Crishman, and J. C. Lee, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.1485123 80, 4416 (2002).
4. M. R. Visokay, J. J. Chambers, A. L. P. Rotandaro, A. Shanware, and L. Colombo, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.1476397 80, 3183 (2002).
5. M. Koyama, A. Kaneko, T. Io, M. Koike, Y. Kamata, R. Iijima, Y. Kamimuta, A. Takashima, M. Suzuki, C. Hongo, S. Inumiya, M. Takayanagi, and A. Nishiyama, Tech. Dig.-Int. Electron Devices Meet. TDIMD5 0163-1918 2002, 849.
6. M. Aoulaiche, M. Houssa, T. Conard, G. Groeseneken, S. De Gendt, and M. M. Heyns, Proceedings of the International Reliability Physics Symposium, 2006 (unpublished) p. 317.
7. M. Suzuki, A. Takashima, M. Koyama, R. Iijima, T. Ino, and M. Takenaka, Nucl. Instrum. Methods Phys. Res. B NIMBEU 0168-583X 219, 851 (2004).
8. M. Hirayama, K. Sekine, Y. Sato, and T. Ohmi, Tech. Dig.-Int. Electron Devices Meet. TDIMD5 0163-1918 1999, 249.
9. A. Chin, C. C. Liao, C. H. Lu, W. J. Chen, and C. Tsai, Tech. Dig. VLSI Technol. Symp. 1999, 135.
10. S. Iwata and A. Ishizaka, J. Appl. Phys. JAPIAU 0021-8979 10.1063/1.362676 79, 6653 (1996).
11. K. Hirose, K. Sakano, K. Takahashi, and T. Hattori, Surf. Sci. SUSCAS 0039-6028 507-510, 906 (2002).
12. Y. Hagimoto, H. Fujioka, M. Oshima, and K. Hirose, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.1334657 77, 4175 (2000).
13. S. Kamiyama, T. Miura, Y. Nara, and T. Arikado, J. Electrochem. Soc. JESOAN 0013-4651 10.1149/1.2006627 152, G750 (2005).
14. J. P. Chang, M. L. Green, V. M. Donnelly, R. L. Opila, J. Eng, Jr., J. Sapjeta, P. J. Silverman, B. Weir, H. C. Lu, T. Gustafsson, and E. Garfunkel, J. Appl. Phys. JAPIAU 0021-8979 10.1063/1.373090 87, 4449 (2000).
15. Y. K. Kim, H. S. Lee, H. W. Yeom, D.-Y. Ryoo, S.-B. Huh, and J.-G. Lee, Phys. Rev. B PRBMDO 0163-1829 10.1103/PhysRevB.70.165320 70, 165320 (2004).
16. S. Horii, D. Ishikawa, A. Sano, Y. Imai, and Y. Kunii, J. Appl. Phys. JAPIAU 0021-8979 10.1063/1.322047 46, 3229 (2007).
17. J. W. Kim, H. W. Yeom, Y. D. Chung, and C. N. Whang, Phys. Rev. B PRBMDO 0163-1829 10.1103/PhysRevB.66.035312 66, 035312 (2002).
18. H. C.-H. Wang, C. W. Tsai, S. J. Chen, C. T. Chan, H. J. Lin, Y. Jin, H. J. Tao, S. C. Chen, C. H. Diaz, T. Ong, A. S. Oates, M. S. Liang, and M. H. Chi, Tech. Dig. VLSI Technol. Symp. 2005, 170.
19. J. P. Kim, Y.-S. Kim, H. J. Lim, J. H. Lee, S. J. Doh, H.-S. Jung, S.-K. Han, M.-J. Kim, J.-H. Lee, N.-I. Lee, H.-K. Kang, K.-P. Suh, and Y.-S. Chung, Tech. Dig.-Int. Electron Devices Meet. TDIMD5 0163-1918 2004, 125.
20. S. Iwata, N. Yamamoto, and F. Yano, J. Jpn. Inst. Metals 60, 469 (1996).
21. T. Nabatame, K. Iwamoto, K. Yamamoto, K. Tominaga, H. Hisamatsu, M. Ohno, K. Akiyama, M. Ikeda, T. Nishimura, H. Ota, T. Horikawa, and A. Toriumi, J. Vac. Sci. Technol. B JVTBD9 1071-1023 10.1116/1.1768526 22, 2128 (2004).