Detection of electron- and hole-traps in SiO2/Si by ESCA

Nippon Kinzoku Gakkaishi/Journal of the Japan Institute of Metals

Volumn 60, Issue 5, 1996, Pages 469-475

  Iwata, Seiichi ^a   Yamamoto, Naoki ^a   Yano, Fumiko ^a  

^a HITACHI LTD   (Japan)

Author keywords

Device characteristics; Electron kinetic energy; Electron spectroscopy for chemical analysis; Electron traps; Hole traps; Sample current; Surface potential; Ultra thin silicon oxide films; X ray irradiation

Indexed keywords

CHEMICAL ANALYSIS; CRYSTAL DEFECTS; CRYSTAL IMPURITIES; ELECTRIC CHARGE; ELECTRIC CURRENT MEASUREMENT; ELECTRON SPECTROSCOPY; INTERFACES (MATERIALS); MOS DEVICES; SILICON; ULTRATHIN FILMS; X RAYS;

ELECTRON KINETIC ENERGY; ELECTRON TRAPS; HALL TRANS; SURFACE POTENTIAL; X RAY IRRADIATION;

SILICA;

EID: 0030146497     PISSN: 00214876     EISSN: None     Source Type: Journal    
DOI: 10.2320/jinstmet1952.60.5_469     Document Type: Article

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