Impact of In situ postnitridation annealing for successful fabrication of HfSiON thin film

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 46, Issue 5 B, 2007, Pages 3229-3233

  Horii, Sadayoshi ^a   Ishirawa, Dai ^a   Sano, Atsushi ^a   Imai, Yoshinori ^a   Kunu, Yasuo ^a  

^a HITACHI KOKUSAI ELECTRIC INC   (Japan)

Author keywords

Hafnium silicate; High k; Nitridation; Postnitrldation annealing

Indexed keywords

ANNEALING; CHEMICAL VAPOR DEPOSITION; CMOS INTEGRATED CIRCUITS; FABRICATION; HAFNIUM COMPOUNDS; NITRIDATION;

AMBIENT ATMOSPHERE; HAFNIUM SILICATES; NITROGEN CONCENTRATION; POSTNITRLDATION ANNEALING;

THIN FILMS;

EID: 34547857499     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.46.3229     Document Type: Article

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