Low-temperature growth of high-integrity silicon oxide films by oxygen radical generated in high-density Krypton plasma

Technical Digest - International Electron Devices Meeting

Volumn , Issue , 1999, Pages 249-252

  Hirayama, Masaki ^a   Sekine, Katsuyuki ^a   Saito, Yuji ^a   Ohmi, Tadahiro ^a  

^a TOHOKU UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; CURRENT DENSITY; DIELECTRIC PROPERTIES; ELECTRIC BREAKDOWN; ELECTRON TRAPS; FILM GROWTH; KRYPTON; OXIDATION; PLASMA APPLICATIONS; PLASMA DENSITY; SILICA; X RAY PHOTOELECTRON SPECTROSCOPY;

ARRHENIUS PLOT; CAPACITANCE VOLTAGE TECHNIQUE; CHARGE TO BREAKDOWN; FOWLER-NORDHEIM TUNNELING; INTERFACE TRAP; LOW ELECTRON TEMPERATURE MICROWAVE EXCITED PLASMA;

THIN FILMS;

EID: 0033307577     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (10)