Characterization of Si(1 0 0)/HfSiON interface

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 219-220, Issue 1-4, 2004, Pages 851-855

  Suzuki, M ^a   Takashima, A ^a   Koyama, M ^a   Iijima, R ^a   Ino, T ^a   Takenaka, M ^a  

^a TOSHIBA CORPORATION   (Japan)

Author keywords

HfSiON; HRBS; Interface; Strain

Indexed keywords

CHARACTERIZATION; GATES (TRANSISTOR); INTERFACES (MATERIALS); MOS DEVICES; NITROGEN; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SEMICONDUCTING SILICON; SPUTTERING; STRAIN; ULTRATHIN FILMS;

ACCUMULATION; ATOMIC DENSITY; CO-SPUTTERING;

HAFNIUM COMPOUNDS;

EID: 2342580720     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.nimb.2004.01.175     Document Type: Conference Paper

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