Nitrogen bonding structure in ultrathin silicon oxynitride films on Si(100) prepared by plasma nitridation [68]

Physical Review B - Condensed Matter and Materials Physics

Volumn 70, Issue 16, 2004, Pages 1-6

  Yu, Kwon Kim ^a   Hyun, Seok Lee ^a   Yeom, H W ^a   Ryoo, Doo Yeol ^b   Huh, Sang Bum ^b   Lee, Jeong Gun ^b  

^a Yonsei University   (South Korea)

^b Hynix Semiconductor Inc   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

NITROGEN; SILICON DERIVATIVE;

ARTICLE; BINDING KINETICS; CHEMICAL BOND; CHEMICAL STRUCTURE; ENERGY; FILM; SYNCHROTRON RADIATION; TEMPERATURE; THERMOSTABILITY;

EID: 11244275519     PISSN: 01631829     EISSN: None     Source Type: Journal    
DOI: 10.1103/PhysRevB.70.165320     Document Type: Article

References (27)

1. E. C. Carr and R. A. Buhrman, Appl. Phys. Lett. 63, 54 (1993).
2. Z.-Q. Yao, H. B. Harrison, S. Dimitrijev, D. Sweatman, and Y. T. Yeow, Appl. Phys. Lett. 64, 3584 (1994).
3. M. L. Green, D. Brasen, K. W. Evans-Lutterodt, L. C. Feldman, K. Krisch, W. Lennard, H.-T. Tang, L. Manchanda, and M.-T. Tang, Appl. Phys. Lett. 65, 848 (1994).
4. A. Kamath, D. L. Kwong, Y. M. Sun, P. M. Blass, S. Whaley, and J. M. White, Appl. Phys. Lett. 70, 63 (1997).
5. J. R. Shallenberger, D. A. Cole, and S. W. Novak, J. Vac. Sci. Technol. A 17, 1086 (1999).
6. H. Kobayashi, T. Mizokuro, Y. Nakato, K. Yoneda, and Y. Todokoro, Appl. Phys. Lett. 71, 1978 (1997).
7. P.-C. Chen, K. Y.-J. Hsu, J.-Y. Lin, and H.-L. Hwang, Jpn. J. Appl. Phys., Part 1 34, 973 (1995).
8. Y. Saito, Appl. Phys. Lett. 68, 800 (1996).
9. S. R. Kaluri and D. W. Hess, Appl. Phys. Lett. 69, 1053 (1996).
10. S. B. Kang, S.-O. Kim, J.-S. Byun, and H. J. Kim, Appl. Phys. Lett. 65, 2448 (1994).
11. R. I. Hegde, P. J. Tobin, K. G. Reid, B. Maiti, and S. A. Ajuria, Appl. Phys. Lett. 66, 2882 (1995).
12. J. P. Chang, M. L. Green, V. M. Donnelly, R. L. Opila, J. Eng, Jr., J. Sapjeta, P. J. Silverman, B. Weir, H. C. Lu, T. Gustafsson, and E. Garfunkel, J. Appl. Phys. 87, 4449 (2000).
13. J. W. Kim, H. W. Yeom, Y. D. Chung, K. Jeong, and C. N. Whang, Phys. Rev. B 66, 035312 (2002).
14. Y. D. Chung, J. W. Kim, C. N. Whang, and H. W. Yeom, Phys. Rev. B 65, 155310 (2002).
15. N. Miyata, H. Watanabe, and M. Ichikawa, Appl. Phys. Lett. 76, 3561 (2000).
16. H. C. Lu, E. P. Gusev, T. Gustafsson, E. Garfunkel, M. L. Green, D. Brasen, and L. C. Feldman, Appl. Phys. Lett. 69, 2713 (1996).
17. Z.-Q. Yao, J. Appl. Phys. 78, 2906 (1995).
18. Y. K. Kim, J. R. Ahn, W. H. Choi, H. S. Lee, and H. W. Yeom, Phys. Rev. B 68, 075323 (2003).
19. G. F. Cerofolini, A. P. Caricato, L. Meda, N. Re, and A. Sgamellotti, Phys. Rev. B 61, 14 157 (2000).
20. J. W. Kim, H. W. Yeom, K. J. Kong, B. D. Yu, D. Y. Ahn, Y. D. Chung, C. N. Whang, H. Yi, Y. H. Ha, and D. W. Moon, Phys. Rev. Lett. 90, 106101 (2003).
21. M. Bhat, J. Ahn, D. L. Kwong, M. Arendt, and J. M. White, Appl. Phys. Lett. 64, 1168 (1994).
22. M. Takahashi, T. Mizokuro, Y. Nishioka, and H. Kobayashi, Surf. Sci. 518, 72 (2002).
23. G.-M. Rignanese, A. Pasquarello, J.-C. Charlier, X. Gonze, and R. Car, Phys. Rev. Lett. 79, 5174 (1997).
24. S. Iwata and A. Ishizaka, J. Appl. Phys. 79, 6653 (1996).
25. H. W. Yeom, H. Hamamatsu, and R. I. G. Uhrberg, Phys. Rev. B 59, R10 413 (1999).
26. H. J. Shin et al., (unpublished data.)
27. The ellipsometric measurements indicate that the oxide thickness for the LP-SiON is 11 Å, which is significantly thicker than 17 Å of HP-SiON. The corresponding N1 intensity for HP-SiON can be attenuated to one-third of that for LP-SiON, when we consider the typical attenuation length of 5-10 Å at the kinetic energy range used.