Roles of nitrogen incorporation in HfAlOx(N) gate dielectrics for suppression of boron penetration

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 22, Issue 4, 2004, Pages 2128-2131

  Nabatame, Toshihide ^a   Iwamoto, Kunihiko ^a   Yamamoto, Katsuhiko ^a   Tominaga, Koji ^a   Hisamatsu, Hirokazu ^a   Ohno, Morifumi ^a   Akiyama, Koji ^a   Ikeda, Minoru ^a   Nishimura, Tomoaki ^a   Ota, Hiroyuki ^a   Horikawa, Tsuyoshi ^a   Toriumi, Akira ^b  

^a NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

^b UNIVERSITY OF TOKYO   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS MATERIALS; ANNEALING; BORON; CHEMICAL BONDS; CRYSTALLIZATION; DENSITY (SPECIFIC GRAVITY); GRAIN BOUNDARIES; HAFNIUM COMPOUNDS; LEAKAGE CURRENTS; MOS DEVICES; NITROGEN; THERMODYNAMIC STABILITY; TRANSMISSION ELECTRON MICROSCOPY;

BOND FORMATION; BORON PENETRATION; GATE DIELECTRICS; POST-DEPOSITION ANNEALING (PDA);

DIELECTRIC MATERIALS;

EID: 4944246940     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1768526     Document Type: Conference Paper

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